Director, Nanoelectronics Research Lab, Professor, Electrical and Computer Engineering, University of California, Santa Barbara
I will highlight the prospects of 2D materials for innovating energy-efficient transistors, sensors, and interconnects targeted for next-generation electronics needed to support the emerging paradigm of Internet of Things. More specifically, I will bring forward a few applications uniquely enabled by 2D materials and their heterostructures that have been demonstrated in my lab for realizing ultra-energy-efficient electronics. This will include the world’s first 2D-channel band-to-band tunneling transistor (Nature 2015) that overcomes a fundamental power consumption challenge in all electronic devices since the discovery of the first transistor in 1947, as well as a breakthrough interconnect technology based on doped-graphene-nanoribbons (Nano Letters 2016), which overcomes the fundamental limitations of conventional metals and provides an attractive pathway toward a low-power and highly reliable interconnect technology for next-generation integrated circuits. I will also bring forward a new class of ultra-sensitive and low-power sensors as well as area-efficient and high-performance passive devices, both enabled by 2D materials, for ubiquitous sensing and connectivity to improve the quality of life.
Professor Kaustav Banerjee from UC Santa Barbara is one of the world’s leading researchers of nanoelectronics. His current research focuses on the physics, technology, and applications of 2D nanomaterials and their heterostructures for designing next-generation green electronics, photonics, and bioelectronics. Initially trained as a physicist, he graduated from UC Berkeley with a Ph.D. in electrical engineering in 1999. A Fellow of IEEE, APS, and AAAS, Professor Banerjee has made seminal contributions toward extending the frontiers of energy-efficient electronics. This includes pioneering work on 3D ICs, now being widely commercialized, which has been recognized by IEEE with the 2015 Kiyo Tomiyasu Award, one of the institute's highest honors. Professor Banerjee’s radical innovations with 2D materials are setting the stage for a new generation of ultra-energy-efficient electronics needed to support the emerging paradigm of “Internet of Things”. This comprised of demonstrating the world’s first 2D-material based tunneling transistor that reduces power dissipation by over 90% (Nature 2015), as well as a novel energy-efficient interconnect technology based on graphene that also overcomes a fundamental reliability limitation of conventional interconnect materials (Nano Letters 2016).