Abstracts >
Keynote abstracts 2019
Antonio Castro Neto: The Worldwide Graphene Flake Production
Department of Electrical and Computer Engineering at National University of Singapore There are hundreds of companies worldwide claiming to produce “graphene,” showing a large variation in its properties. A systematic and reliable protocol is developed to test graphene quality using electron microscopy, atomic force microscopy, Raman spectroscopy, elemental analysis, X-ray photoelectron spectrometry, and scanning and transmission electron microscopy, which is used to study graphene from 60 producers. The statistical nature of the liquid-phase exfoliation of graphite is established. It is shown that the current classification of graphene flakes used in the market is erroneous. A new classification is proposed in terms of distribution functions for number of layers and flake size. It is shown unequivocally that the quality of the graphene produced in the world today is rather poor, not optimal for most applications, and most companies are producing graphite microplatelets. This is possibly the main reason for the slow development of graphene applications, which usually require a customized solution in terms of graphene properties. It is argued that the creation of stringent standards for graphene characterization and production, taking into account both the physical properties, as well as the requirements from the particular application, is the only way forward to create a healthy and reliable worldwide graphene market. Prof. Antonio H. Castro Neto got his Ph.D.
in Physics at University of Illinois at UrbanaChampaign in 1994. In 1994, he
moved to the Institute for Theoretical Physics at the University of California
at Santa Barbara as a postdoctoral fellow. In 1995, he became an Assistant
Professor at University of California at Riverside. In 2000, he moved to Boston
University as Professor of Physics. At Boston, Prof. Castro Neto became one of
the leading theorists in the study of graphene and other two dimensional
materials. Since 2010, Prof. Castro Neto is the Director of the Graphene
Research Center and in 2014 he became Director of the Centre for Advanced 2D
Materials funded by the National Research Foundation of Singapore. Prof. Castro Neto is a Distinguished
Professor in the Physics Department and in the Department of Material Science
Engineering, he is also Professor at the Department of Electrical and Computer
Engineering, at the National University of Singapore. In 2003, Prof. Castro
Neto was elected a fellow of the American Physical Society (APS) and in 2011 he
was elected a fellow of the American Association for the Advancement of Science
(AAAS). He is the Colloquia Editor for Reviews of Modern Physics, and member of
the Editorial Board of “Chinese Physics B” and “Acta Physica Sinica”. Prof. Castro Neto was awarded the 11th Ross
J. Martin Award by the University of Illinois at Urbana-Champaign; the
University of California Regent Fellowship; the Alfred P. Sloan Research
Fellowship; the visiting Miller Professorship by the University of California,
Berkeley; the visiting Gordon Godfrey Professorship by the University of New
South Wales, Australia; the Distinguished Visiting Chair Professor at the SKKU
Advanced Institute of Nano-Technology (SAINT), South Korea; the Hsun Lee
Lecture Award by the Institute of Metal Research at the Chinese Academy of
Sciences; and Kramers Professorship at the University of Utrecht, the
Netherlands. In 2016, Prof. Castro Neto founded 2D
Materials (2DM) Pte Ltd in Singapore for the development of high quality
graphene, and in 2017 he founded MADE Advanced Materials Pte Ltd for the development
of graphene composites with carbon and glass fibers. |
James Hone: Approaching the Intrinsic Limit in Transition Metal Dichalcogenide van der Waals Heterostructures
Studying the intrinsic behavior 2D
materials requires attention to both external and internal sources of disorder.
This talk will first review the techniques used to create clean
heterostructures with hBN to reduce environmental disorder. In graphene, ten years
of progress has led to device performance now rivaling he highest-quality
GaAs-based heterostructures.
Semiconducting transition metal dichalcogenides (TMDs) also benefit from
hBN encapsulation but are limited by atomic defects. The types and density of atomic defects in
TMDs will be reviewed, as well as progress in synthesis of TMDs with
dramatically lower defect density.
Combining higher crystal quality and clean encapsulation allows
observation of greatly enhanced optical properties, including near-unity
photoluminescence quantum yield, and long excited-state lifetime in TMD
heterostructures. In addition, electronic transport measurements show improved
carrier mobility and reveal many new details of the Landau spectra, including
observation of fractional quantum Hall states in monolayer TMDs. |
Frank Koppens: Topological plasmons, polaritonic metasurfaces and twist-plasmonics
ICFO-Institut de Ciencies Fotoniques, The Barcelona Institute of Science and Technology, 08860 Castelldefels (Barcelona), Spain 2ICREA – Institució Catalana de Recerça i Estudis Avancats, Barcelona, Spain. Frank.koppens@icfo.eu Several two-dimensional materials are model systems with tunable topological electronic bands that exist only in a few exotic materials. Here, we will discuss the progress and prospects of topological nanophotonics with two-dimensional materials. We exploit THz and infrared near-field imaging and spectroscopy techniques to directly spatially visualize the strongly compress optical modes at topological interfaces, polariton propagation and effects of disorder. We also discuss the nanophotonic properties of twisted bilayer graphene, which has demonstrated unconventional superconductivity when twisted with specific “magic” angles. Topological nanophotonics may enable novel future applications in miniaturized photonic isolators, diodes and logic circuits and could lead to completely new concepts for communication systems, optical transistors and optical information processing. Prof. Frank Koppens obtained his PhD in experimental physics at Delft University, at the Kavli Institute of Nanoscience, The Netherlands. After a postdoctoral fellowship at Harvard University, Since August 2010, Koppens is group leader at the Institute of Photonic Sciences (ICFO). The quantum nano-optoelectronics group of Prof. Koppens focuses on both science and technology of novel two-dimensional materials and quantum materials. Prof. Koppens is vice-chairman of the executive board of the graphene flagship program, a 1000 MillionEuro project for 10 years. He is also the leader of the optoelectronics workpackage within the flagship. Prof. Koppens holds a GSMA Chair with activities related to the Mobile World Congress. Koppens has received five ERC awards: the ERC starting grant, the ERC consolidator grant, and three ERC proof-of-concept grants. Other awards include the Christiaan Hugyensprijs 2012, the national award for research in Spain, and the IUPAP young scientist prize in optics. In total, Koppens has published more than 70 refereed papers (H-index above 47), with more than 35 in Science and Nature family journals. Total citations >17.500 (google scholar). |
Steven G. Louie: Interaction and Topological Effects in Atomically Thin 1D & 2D Materials
Physics Department, University of California at Berkeley, and Lawrence Berkeley National Lab, Berkeley, California 94720 U.S.A. Symmetry, interaction and topological effects, as well as environmental screening, dominate many quantum properties of reduced-dimensional systems, leading often to manifestation of counter-intuitive concepts and phenomena that may not be so prominent or have not been seen in bulk materials. In this talk, I present some fascinating discoveries in recent studies of atomically thin one-dimensional (1D) and two-dimensional (2D) materials. A number of interesting and unexpected behaviors have been found – e.g., strongly bound excitons (electron-hole pairs) with unusual energy level structures and new topology-dictated optical selection rules, tunable magnetism and plasmonic properties, novel topological phases, correlated multi-particle excitations, excitonic shift currents, etc. – adding to the promise of these 1D and 2D materials for exploration of new science and valuable applications.
Professor Steven G. Louie received his
Ph.D. in physics from the University of California at Berkeley (UC Berkeley) in
1976. After having worked at the IBM Watson Research Center, Bell Labs, and U of
Penn, he joined the UC Berkeley faculty in 1980, where he is professor of
physics and concurrently a faculty senior scientist at the Lawrence Berkeley
National Lab. He is an elected member of the National Academy of Sciences, the American
Academy of Arts & Sciences, and the Academia Sinica (Taiwan), as well as a
fellow of the American Physical Society (APS), the American Association for the
Advancement of Science, and the Materials Research Society. Among his other honors, he is recipient of
the APS Aneesur Rahman Prize for Computational Physics, the APS Davisson-Germer
Prize in Surface Physics, the Materials Theory Award of the Materials Research
Society, the Foresight Institute Richard P. Feynman Prize in Nanotechnology,
the U.S. Department of Energy Award for Sustained Outstanding Research in Solid
State Physics, as well as Jubilee Professor of the Chalmers University of
Technology in Sweden and H. C. Ørsted Lecturer of the Technical University of
Denmark. Professor Louie’s research
spans a broad spectrum of topics in theoretical condensed matter physics and
nanoscience. He is known for his groundbreaking work on the ab initio GW method
and for his seminal work on surfaces and interfaces, nanostructures, and
reduced-dimensional systems. |
Deji Akinwande: Adventures with 2D materials for unconventional applications
University of Texas –
Austin This talk will present our latest research adventures on 2D nanomaterials towards greater scientific understanding and advanced engineering applications. In particular the talk will highlight our work on flexible electronics, zero-power devices, monolayer memory (atomristors), non-volatile RF switches, and wearable tattoo sensors. Non-volatile memory devices based on 2D materials are an application of defects and is a rapidly advancing field with rich physics that can be attributed to sulfur vacancies or metal diffusion. Atomistic modeling and atomic resolution imaging are contemporary tools under use to elucidate the memory phenomena. Likewise, from a practical point, electronic tattoos based on graphene have ushered a new material platform that has highly desirable practical attributes including optical transparency, mechanical imperceptibility, and is the thinnest conductive electrode sensor that can be integrated on skin for physiological measurements. Much of these research achievements have been published in nature, IEEE and ACS journals, and widely covered by the news media including Time magazine, BBC, Nature news, IEEE spectrum, and several dozen media outlets. [1] X. Wu, R. Ge, P.-A. Chen, H. Chou, Z. Zhang, Y. Zhang, S. Banerjee, M.-H. Chiang, J. C. Lee, and D. Akinwande, "Thinnest Nonvolatile Memory Based on Monolayer h-BN," Advanced Materials, vol. 0, p. 1806790, 2019. [2] M. Kim, R. Ge, X. Wu, X. Lan, J. Tice, J. C. Lee, and D. Akinwande, "Zero-static power radio-frequency switches based on MoS2 atomristors," Nature Communications, vol. 9, p. 2524, 2018/06/28 2018. [3] S. Kabiri Ameri, R. Ho, H. Jang, L. Tao, Y. Wang, L. Wang, D. M. Schnyer, D. Akinwande, and N. Lu, "Graphene Electronic Tattoo Sensors," ACS Nano, vol. 11, 2017. |
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