Abstracts‎ > ‎Poster Abstracts 2019‎ > ‎

Michal Prokop: Scanning gate microscopy of gated MoS2 nanoribbons

posted 8 Aug 2019, 02:58 by info admin
M. Prokop, M. P. Nowak, Academic Centre for Materials and Nanotechnology, AGH – University of Science and Technology, Poland

The growing interest in single-layer transition 
metal dichalcogenides is driven mostly by their promising applications in novel electronics that exploits spin and valley properties of charge carriers [1]. By the means of tight-binding [2] transport calculation we demonstrate how scanning gate microscopy technique can be used to probe valleysplitting
and spin-orbit coupling in gated single-layer MoS2 nanoribbons. We show that in a pristine ribbon the conductance mapping reveals the presence of the edge modes provided the Fermi energy is tuned into the bulk band gap. Investigating the coherent electron flow from a quantum point contact we explain that the number of the current branches depends on the intrinsic spin-orbit coupling strength and that disorder-induced valley mixing results in a beating pattern in the conductance maps.

[1] K. F. Mak, K. L. McGill, J. Park, P. L. McEuen, Science 344, 1489
[2] E. Cappelluti, R. Roldán, J. A. Silva-Guillén, P. Ordejón, and F.
Guinea, Phys. Rev. B 88, 075409 (2013)

Master of Science in Applied Informatics. Member of HOMING programme of the Foundation for Polish Science (2018-2019) - „Electronic transport in semiconducting and superconducting monolayer trasition metal dichalcogenide nanodevices”. The project directed by Michał Nowak (in cooperation with Anton Akhmerow and Michael Wimmer from Quantum Tingerer Group at TU Delft) aimed in describing of electronic transport in a new class of semiconducting nanostructures: monolayer transition metal dichalcogenides.