Dong-Chul Kim (1,2), Jungtae Nam(3), Hoyeol Yun(4), Seungjin Nam(5), Jun Yeon Hwang(5), SangWook Lee(4), Helge Weman(1,2), and Keun Soo Kim(3) (1) CrayoNano AS, Otto Nielsens vei 12, NO-7052 Trondheim, Norway (2) Department of Electronics and Telecommunications, NTNU, Norwegian University of Science and Technology, NO-7491 Trondheim, Norway (3) Department of Physics and Graphene Research Institute, Sejong University, Seoul 143-747, Korea (4) School of Physics, Konkuk University, Seoul 143-701, Korea (5) Institute of Advanced Composite Materials, Korea Institute of Science and Technology, Joellabuk-do 565-905, Korea  Low-pressure chemical vapor deposition (CVD) of graphene has been investigated using Pt as a metal catalyst. Various Pt substrates such as Pt films deposited by e-beam evaporation and sputtering, as well as polycrystalline Pt foils have been used. It was found that sputtering at high temperature is important in order to maintain a continuous thin film form of (111)-oriented crystalline Pt without any significant de-wetting during graphene growth, in contrast to e-beam deposited Pt films. CVD growth on high temperature sputtered Pt films results in homogenous single layer graphene, free of micro-sized multilayer graphene islands by carbon segregations and precipitations observed in polycrystalline Pt foils. Growth of single layer graphene is demonstrated on Pt films with a thickness down to 25 nm. Physisorption strains of as-grown graphene on Pt substrates have been investigated. Raman G and 2D bands of graphene show a correlation with the surface facet orientations of Pt substrates measured by electron backscatter diffractions.  |
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