Spyros N. Yannopoulos, Aspasia Antonelou Foundation for Research and Technology Hellas – Institute of Chemical Engineering Sciences (FORTH/ICE-HT), P.O. Box 1414, GR-26504, Rio-Patras, Greece After one decade of systematic fundamental research on graphene, it is generally agreed that many of the graphene superior physical properties are currently well understood. A major experimental challenge is now related to the of high-quality graphene and graphene-based structures, which is a prerequisite to transform laboratory graphene science into viable technological applications. Established methods for high-quality graphene growth (e.g., CVD, epitaxial growth on SiC) suffer from disadvantages (energy intensive, requirement for transfer, etc.), which constitute serious obstacles to the prospects of graphene for fast integration in widespread technologies. The full potential of laser-assisted methods in graphene productions has not yet been unlocked, despite that these methods offer a number of advantages. Laser wavelengths ranging from ultraviolet to infrared have been used both in the cw and pulsed modes. In their vast majority, studies of laser-assisted methods result in graphene of dubious quality. We present recent advances in our laboratory concerning the laser-assisted growth of graphene. In particular, we will present activities related to (i) the growth of epitaxial graphene on SiC(0001) using a continuous wave infrared CO2 laser (10.6 μm); (ii) production 3D porous graphene-like scaffolds through the decomposition of SiC micron-sized particles; and (iii) the growth of graphene films by decomposing various organic substances using pulsed lasers. [1] S. N. Yannopoulos, A. Siokou, N. Nasikas, V. Dracopoulos, F. Ravani, and G. N. Papatheodorou, “CO2 Laser-Induced Growth of Epitaxial Graphene on SiC (0001)”, Adv. Funct. Mater. 22, 113–120 (2012). DOI: 10.1002/adfm.201101413. [2] A. Antonelou, V. Dracopoulos and S. N. Yannopoulos, “Laser processing of SiC: From graphene-coated SiC particles to 3D graphene froths”, Carbon 85, 176–184 (2015). DOI: http://dx.doi.org/10.1016/j.carbon.2014.12.091. ![]() |
Poster abstracts >