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Max Lemme: Graphene Nanoelectronic Devices – It’s not all about Mobility

posted 4 Jun 2014, 02:35 by Mette Lund Meisner
Max C. Lemme, Department of Electrical Engineering and Computer Science, University of Siegen, 57076 Siegen, Germany and School of Information and Communication Technology, KTH Royal Institute of Technology, 16440 Kista, Sweden

Graphene has been heralded as a material with the potential to revolutionize micro- and nanoelectronics. While graphene Physics certainly is intriguing in many aspects, careful device engineering will be required to actually exploit the material’s exceptional intrinsic properties. In this talk, I will discuss potential device applications that are based on a combination of graphene’s mobility, conductivity, velocity saturation, Young’s modulus and/or thinness. First, graphene field effect transistors (FETs) will be assessed for logic and radio frequency applications. Next, hot electron transistors with graphene components will be introduced that are projected to allow THz operation. Finally, the low mass of 2D materials makes them interesting for nanoelectromechanical systems. This will be discussed using the example of graphene membrane based piezoresistive pressure sensors. Since the future manufacturability of graphene devices requires scalable and reproducible graphene growth methods, all examples have been fabricated from large area, chemical vapor deposited graphene.

Fig. 1: Scanning electron micrograph of a packaged graphene field effect transistor.

Max Lemme received the Dipl.-Ing. (MSc) degree in 1998 and the Dr.-Ing. (PhD) degree in 2003 in Electrical Engineering from RWTH Aachen University in Germany. Since 2012, he is Heisenberg-Professor for Graphene-based Nanotechnology at the University of Siegen, Germany and since 2010 he is Affiliated Professor at KTH Royal Institute of Technology, Sweden. Before joining KTH, he was a research fellow at Harvard University from 2008-2010 and worked for 10 years at nanotechnology start-up AMO GmbH, Germany, as Head of Technology Department. His research interests include non-conventional nano-CMOS devices, high-k materials for gate stacks and technology, devices and circuits based on graphene and other 2D materials. He received a NanoFutur Award by the German Federal Ministry for Education and Research (BMBF) in 2006, a Humboldt-Fellowship in 2007 and an ERC Grant in 2012. He is a Senior Member of the IEEE.