Max C. Lemme, Department of Electrical Engineering and Computer Science, University of Siegen, 57076 Siegen, Germany and School of Information and Communication Technology, KTH Royal Institute of Technology, 16440 Kista, Sweden
Graphene has been heralded as a material with the potential to revolutionize micro- and nanoelectronics. While graphene Physics certainly is intriguing in many aspects, careful device engineering will be required to actually exploit the material’s exceptional intrinsic properties. In this talk, I will discuss potential device applications that are based on a combination of graphene’s mobility, conductivity, velocity saturation, Young’s modulus and/or thinness. First, graphene field effect transistors (FETs) will be assessed for logic and radio frequency applications. Next, hot electron transistors with graphene components will be introduced that are projected to allow THz operation. Finally, the low mass of 2D materials makes them interesting for nanoelectromechanical systems. This will be discussed using the example of graphene membrane based piezoresistive pressure sensors. Since the future manufacturability of graphene devices requires scalable and reproducible graphene growth methods, all examples have been fabricated from large area, chemical vapor deposited graphene.
Fig. 1: Scanning electron micrograph of a packaged graphene field effect transistor.