However, graphene lacks a bandgap around the Fermi level, which is the defining concept for semiconductor materials and essential for controlling the conductivity by electronic means. Several approaches to engineer a bandgap opening in graphene have been suggested, but until recently experimental realizations have been limited to gap openings too small for room temperature operation. By hydrogen functionalization of graphene we have demonstrated the opening of a bandgap of ~1.0 eV, sufficiently large for real applications. The potential of this method, as well as the potentials and limitations of chemical functionalization of graphene, free-standing and on various substrates, will be discussed.
Group webpage: http://www.phys.au.dk/surface-dynamics