Rajesh Kumar Chellappan: In situ study of graphene patterning on SiC

posted 3 Jul 2017, 06:10 by info admin
Rajesh Kumar Chellappan, Adam Götz, Simon Cooil and Justin Wells

Department of Physics, Norwegian University of Science and Technology (NTNU), N-7491 Trondheim, Norway

Graphene has been proposed as a promising candidate for the fabrication of radiation sensors due to its exceptional electronic properties. Problems associated with the preparation of high-quality graphene on a suitable substrate hinders the realization of the advantages of graphene. This study focuses on patterned epitaxial iron-mediated growth of graphene on silicon carbide to eliminate the conventional step of transferring graphene onto another substrate during device fabrication. The growth of graphene was achieved by the deposition of iron through a shadow mask on SiC and annealing at 710°C. The formation of graphene selectively on the unmasked region was also confirmed using spatially resolved X-ray photoelectron spectroscopy.

Rajesh Kumar Chellappan is a postdoctoral researcher in the Physics department at Norwegian University of Technology and Science (NTNU), Norway. His current research work is focussed on the fabrication and characterization of graphene based photodetectors and radiation sensors. He received his MSc. Degree in Nanoelectronics from University of Manchester, United Kingdom and PhD from Dublin City University, Ireland.