Archive‎ > ‎

Wonjae Kim: Electrical rectifications in three-terminal graphene FETs

posted 7 Aug 2014, 06:05 by Lisbeth Kirk Mynster
W. Kim, C. Li, H. Lipsanen, J. Riikonen, Department of Micro- and Nanosciences, Aalto University, 02230 Espoo, Finland 

Nonlinear behavior in a two-dimensional electron gas (2-DEG) has attracted great attention. Particularly, in a three-terminal based device it exhibits like electrical rectification as electric potential is always negative (positive) at the center of the n-type (p-type) channel when two input terminals are anti-symmetrically biased at the same time. In this study, utilizing CVD graphene, we demonstrate a prominent room temperature rectification in three-terminal based FETs having a scale of tens of micrometers. The channel and gate are fabricated utilizing only single-layer graphene to have a transparent function. In addition, we present inverter operation on the same structure by the change of electrical configuration. To see the scaling effect, we finally compare device performances for the structures having different lengths and widths of the channel. 

Wonjae Kim is currently a Ph.D. student in Department of Micro- and Nanosciences at Aalto University. He studies mainly for fabrication and characterization of graphene based electronic devices. He received his M.Sc. degree (2007) and is to receive Ph.D in Electrical Engineering from Aalto University (2014).